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Marktgröße für intelligente Leistungsmodule nach Nennspannung bis 600 V, 1.200 V, über 1.200 V, nach Nennstrom bis 20 A, 20 A – 100 A, > 100 A, nach Leistungsgeräten IGBT Insulated-Gate Bipolar Transistor , MOSFET Metalloxid-Halbleiter-Feldeffekttransistor , nach Anwendung Unterhaltungselektronik,

Published on: 2024-07-05 | No of Pages : 432 | Industry : Neueste Trends

Publisher : MRAA | Format : PDF&Excel

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